IRF443 Specs and Replacement
Type Designator: IRF443
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO3
IRF443 substitution
- MOSFET ⓘ Cross-Reference Search
IRF443 datasheet
irf4435.pdf
PD- 94243 IRF4435 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon ar... See More ⇒
irf4435tr.pdf
IRF4435TR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D ... See More ⇒
irf440.pdf
PD - 90372A REPETITIVE AVALANCHE AND dv/dt RATED IRF440 500V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF440 500V 0.85 8.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design... See More ⇒
Detailed specifications: IRF421 , IRF422 , IRF423 , IRF431 , IRF432 , IRF433 , IRF441 , IRF442 , STP80NF70 , IRF4410A , IRF4410H , IRF450B , IRF450C , IRF460B , IRF460C , IRF510PBF , IRF510STRLPBF .
History: IRF450C
Keywords - IRF443 MOSFET specs
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History: IRF450C
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