IRF443 - описание и поиск аналогов

PD- 94243 IRF4435 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon ar

IRF4435TR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

PD - 90372A REPETITIVE AVALANCHE AND dv/dt RATED IRF440 500V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF440 500V 0.85 8.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design

RoHS IRF4410 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (97A, 100Volts) DESCRIPTION The Nell IRF4410 is a three-terminal silicon D device with current conduction capability of 97A, D fast switching speed, low on-state resistance, breakdown voltage rating of 100V ,and max. threshold voltage of 4 volts. G They are designed for use in application

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF441 FEATURES V Rated at 20V GS Silicon Gate for Fast Switching Speeds I ,V ,SOA and V specified at Elevated DSS DS(on) GS(th) temperature Rugged Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as