PD- 94243IRF4435HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon ar

IRF4435TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

PD - 90372AREPETITIVE AVALANCHE AND dv/dt RATED IRF440500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF440 500V 0.85 8.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design

RoHS IRF4410 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(97A, 100Volts)DESCRIPTION The Nell IRF4410 is a three-terminal silicon Ddevice with current conduction capability of 97A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 100V ,and max. threshold voltage of 4 volts.G They are designed for use in application

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF441FEATURESV Rated at 20VGSSilicon Gate for Fast Switching SpeedsI ,V ,SOA and V specified at ElevatedDSS DS(on) GS(th)temperatureRuggedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as