All MOSFET. IRF4410A Datasheet


IRF4410A MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF4410A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 230 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 97 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 52 nS
   Drain-Source Capacitance (Cd): 430 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
   Package: TO220AB

 IRF4410A Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF4410A Datasheet (PDF)

 ..1. Size:671K  nell
irf4410a irf4410h.pdf


RoHS IRF4410 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(97A, 100Volts)DESCRIPTION The Nell IRF4410 is a three-terminal silicon Ddevice with current conduction capability of 97A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 100V ,and max. threshold voltage of 4 volts.G They are designed for use in application

 8.1. Size:132K  njs
irf440 irf441 irf442 irf443.pdf


 8.2. Size:229K  inchange semiconductor


INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF441FEATURESV Rated at 20VGSSilicon Gate for Fast Switching SpeedsI ,V ,SOA and V specified at ElevatedDSS DS(on) GS(th)temperatureRuggedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as

 9.1. Size:211K  international rectifier


PD- 94243IRF4435HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon ar

 9.2. Size:142K  international rectifier


PD - 90372AREPETITIVE AVALANCHE AND dv/dt RATED IRF440500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF440 500V 0.85 8.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design

 9.3. Size:822K  cn vbsemi


IRF4435TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF540N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


Back to Top