All MOSFET. IRLMS6702PBF-1 Datasheet

 

IRLMS6702PBF-1 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLMS6702PBF-1

SMD Transistor Code: C*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.7 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.7 V

Maximum Drain Current |Id|: 2.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: SOT457

IRLMS6702PBF-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLMS6702PBF-1 Datasheet (PDF)

1.1. irlms6702pbf.pdf Size:169K _upd

IRLMS6702PBF-1
IRLMS6702PBF-1

PD - 95224 IRLMS6702PbF HEXFET® Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.20Ω Description Fifth Generation HEXFET® power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

1.2. irlms6702pbf-1.pdf Size:204K _upd

IRLMS6702PBF-1
IRLMS6702PBF-1

IRLMS6702PbF-1 HEXFET® Power MOSFET VDS -20 V A 1 6 D D RDS(on) max 0.200 (@V = -4.5V) GS 2 5 Ω D D RDS(on) max 0.375 (@V = -2.7V) GS 3 4 G S Qg (typical) 5.8 nC Micro6™ ID Top View -2.4 A (@T = 25°C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufact

 1.3. irlms6702.pdf Size:195K _upd

IRLMS6702PBF-1
IRLMS6702PBF-1

PD - 91414C IRLMS6702 HEXFET® Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET 3 4 G S RDS(on) = 0.20Ω Description Fifth Generation HEXFET® power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

1.4. irlms6702.pdf Size:103K _international_rectifier

IRLMS6702PBF-1
IRLMS6702PBF-1

PD - 9.1414B IRLMS6702 HEXFET Power MOSFET Generation V Technology A 1 6 D D Micro6 Package Style VDSS = -20V Ultra Low Rds(on) 2 5 D D P-Channel MOSFET 3 4 G S RDS(on) = 0.20? Description Fifth Generation HEXFETs from International Rectifier Top View utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined w

Datasheet: IRF510PBF , IRF510STRLPBF , IRF510STRRPBF , IRLMS1503PBF-1 , IRLMS1503PBF , IRLMS1902PBF , IRLMS2002PBF , IRLMS5703PBF , IRF9640 , IRLMS6702PBF , IRLMS6802PBF , IRF1503L , IRF1503LPBF , IRF1503PBF , IRF1503SPBF , IRF150B , IRF150C .

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