All MOSFET. IRLL024ZPBF Datasheet

 

IRLL024ZPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLL024ZPBF
   Marking Code: LL024Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT223

 IRLL024ZPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLL024ZPBF Datasheet (PDF)

 ..1. Size:265K  international rectifier
 irll024zpbf.pdf

IRLL024ZPBF IRLL024ZPBF

PD - 95990AIRLL024ZPbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 150C Operating TemperatureRDS(on) = 60ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 5.0ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance

 6.1. Size:273K  international rectifier
 irll024z.pdf

IRLL024ZPBF IRLL024ZPBF

PD - 95886AIRLL024ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 150C Operating TemperatureRDS(on) = 60ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 5.0ASDescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes the latest processi

 6.2. Size:228K  international rectifier
 auirll024z.pdf

IRLL024ZPBF IRLL024ZPBF

PD - 97762AUTOMOTIVE GRADEAUIRLL024ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS55V Ultra Low On-Resistance 150C Operating TemperatureRDS(on) typ.48m Fast SwitchingG max. 60m Repetitive Avalanche Allowed up toTjmax SID5.0A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically de

 6.3. Size:674K  infineon
 auirll024z.pdf

IRLL024ZPBF IRLL024ZPBF

AUTOMOTIVE GRADE AUIRLL024Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) typ. Logic Level Gate Drive 48m 150C Operating Temperature max. 60m Fast Switching ID 5.0A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Des

 6.4. Size:1437K  cn vbsemi
 irll024ztr.pdf

IRLL024ZPBF IRLL024ZPBF

IRLL024ZTRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1225 | 2SK889 | IRLML0030PBF-1 | FDS8435A | AFN3030

 

 
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