All MOSFET. IRLL024ZPBF Datasheet

 

IRLL024ZPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLL024ZPBF

SMD Transistor Code: LL024Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 66 pF

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: SOT223

IRLL024ZPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLL024ZPBF Datasheet (PDF)

1.1. irll024zpbf.pdf Size:265K _upd

IRLL024ZPBF
IRLL024ZPBF

PD - 95990A IRLL024ZPbF HEXFET® Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150°C Operating Temperature RDS(on) = 60mΩ l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 5.0A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance

2.1. irll024z.pdf Size:273K _international_rectifier

IRLL024ZPBF
IRLL024ZPBF

PD - 95886A IRLL024Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 150°C Operating Temperature RDS(on) = 60mΩ l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 5.0A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processi

 3.1. irll024npbf.pdf Size:142K _upd

IRLL024ZPBF
IRLL024ZPBF

PD - 95221 IRLL024NPbF HEXFET® Power MOSFET Surface Mount Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching RDS(on) = 0.065Ω G Fully Avalanche Rated Lead-Free ID = 3.1A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

3.2. irll024nq.pdf Size:163K _international_rectifier

IRLL024ZPBF
IRLL024ZPBF

PD-94152 AUTOMOTIVE MOSFET IRLL024NQ Typical Applications HEXFET Power MOSFET Electronic Fuel Injection Active Suspension Power Doors, Windows & Seats D Cruise Control VDSS = 55V Air Bags Benefits RDS(on) = 0.065? Advanced Process Technology G Ultra Low On-Resistance 175C Operating Temperature ID = 3.1A Repetitive Avalanche Allowed up to Tjmax S Dynamic dv/dt Ratin

 3.3. irll024n.pdf Size:114K _international_rectifier

IRLL024ZPBF
IRLL024ZPBF

PD - 91895 IRLL024N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.065? Fast Switching G Fully Avalanche Rated ID = 3.1A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

Datasheet: IRF1704 , IRF1902PBF , IRF200B211 , IRLL2705PBF , IRLL3303PBF , IRLL014NPBF , IRLL014PBF , IRLL024NPBF , 2SK3878 , IRLL110TRPBF , IRLL2703PBF , IRFL014NPBF , IRFL014PBF , IRFL024NPBF , IRFL024ZPBF , IRFL1006PBF , IRFL110PBF .

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