IRLL2703PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLL2703PBF
SMD Transistor Code: LL2703
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
Maximum Drain Current |Id|: 3.9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 24 nS
Drain-Source Capacitance (Cd): 230 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: SOT223
IRLL2703PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLL2703PBF Datasheet (PDF)
1.1. irll2703pbf.pdf 
Size:138K _upd
PD - 95337 IRLL2703PBF HEXFET® Power MOSFET l Surface Mount l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.045Ω l Fully Avalanche Rated G l Lead-Free ID = 3.9A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist
2.1. irll2703.pdf Size:113K _international_rectifier
PD - 91894 IRLL2703 HEXFET® Power MOSFET Surface Mount D Advanced Process Technology VDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.045? Fast Switching G Fully Avalanche Rated ID = 3.9A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This
3.1. irll2705pbf.pdf Size:220K _upd
PD- 95338 IRLL2705PbF HEXFET® Power MOSFET l Surface Mount l Dynamic dv/dt Rating D l Logic-Level Gate Drive VDSS = 55V l Fast Switching l Ease of Paralleling RDS(on) = 0.04Ω l Advanced Process Technology G l Ultra Low On-Resistance ID = 3.8A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve e
3.2. irll2705.pdf Size:160K _international_rectifier
PD- 91380B IRLL2705 HEXFET® Power MOSFET Surface Mount D Dynamic dv/dt Rating VDSS = 55V Logic-Level Gate Drive Fast Switching RDS(on) = 0.04? Ease of Paralleling G Advanced Process Technology ID = 3.8A Ultra Low On-Resistance S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p
Datasheet: IRF200B211 , IRLL2705PBF , IRLL3303PBF , IRLL014NPBF , IRLL014PBF , IRLL024NPBF , IRLL024ZPBF , IRLL110TRPBF , FDS4435 , IRFL014NPBF , IRFL014PBF , IRFL024NPBF , IRFL024ZPBF , IRFL1006PBF , IRFL110PBF , IRFL210PBF , IRFL214PBF .
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