IRLL2703PBF - описание и поиск аналогов

PD - 95337 IRLL2703PBF HEXFET Power MOSFET l Surface Mount l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.045 l Fully Avalanche Rated G l Lead-Free ID = 3.9A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

PD - 91894 IRLL2703 HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.045 Fast Switching G Fully Avalanche Rated ID = 3.9A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

AUTOMOTIVE GRADE AUIRLL2705 Features HEXFET Power MOSFET l Advanced Planar Technology D l Low On-Resistance V(BR)DSS 55V l Logic Level Gate Drive RDS(on) max. l Dynamic dv/dt Rating 0.04 G l 150 C Operating Temperature S ID 3.8A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified* S

PD- 91380B IRLL2705 HEXFET Power MOSFET Surface Mount D Dynamic dv/dt Rating VDSS = 55V Logic-Level Gate Drive Fast Switching RDS(on) = 0.04 Ease of Paralleling G Advanced Process Technology ID = 3.8A Ultra Low On-Resistance S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

PD- 95338 IRLL2705PbF HEXFET Power MOSFET l Surface Mount l Dynamic dv/dt Rating D l Logic-Level Gate Drive VDSS = 55V l Fast Switching l Ease of Paralleling RDS(on) = 0.04 l Advanced Process Technology G l Ultra Low On-Resistance ID = 3.8A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve e

IRLL2705TR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs 60 0.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET AB