IRFL110PBF Datasheet. Specs and Replacement

Type Designator: IRFL110PBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: SOT223

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IRFL110PBF substitution

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IRFL110PBF datasheet

 ..1. Size:197K  international rectifier
irfl110pbf.pdf pdf_icon

IRFL110PBF

PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 0.54 Ease of Paralleling G Simple Drive Requirements Lead-Free ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast ... See More ⇒

 7.1. Size:244K  international rectifier
irfl110.pdf pdf_icon

IRFL110PBF

PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 0.54 Ease of Paralleling G Simple Drive Requirements ID = 1.5A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rug... See More ⇒

 7.2. Size:1503K  vishay
irfl110 sihfl110.pdf pdf_icon

IRFL110PBF

IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.3 Fast Switching Qgd (nC) 3.8 Ease of Paralleling Simple Drive R... See More ⇒

 7.3. Size:1977K  cn vbsemi
irfl110tr.pdf pdf_icon

IRFL110PBF

IRFL110TR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET AB... See More ⇒

Detailed specifications: IRLL024ZPBF, IRLL110TRPBF, IRLL2703PBF, IRFL014NPBF, IRFL014PBF, IRFL024NPBF, IRFL024ZPBF, IRFL1006PBF, 60N06, IRFL210PBF, IRFL214PBF, IRFL4105PBF, IRFL4310PBF, IRFL4315PBF, IRFL9014PBF, IRFL9110PBF, IRLZ44PBF

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