All MOSFET. IRLZ34NSPBF Datasheet

 

IRLZ34NSPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLZ34NSPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm

Package: TO263

IRLZ34NSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLZ34NSPBF Datasheet (PDF)

1.1. irlz34nspbf irlz34nlpbf.pdf Size:293K _upd

IRLZ34NSPBF
IRLZ34NSPBF

PD - 95583 IRLZ34NSPbF IRLZ34NLPbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Advanced Process Technology D l Surface Mount (IRLZ34NS) VDSS = 55V l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature RDS(on) = 0.035Ω l Fast Switching G l Fully Avalanche Rated ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utiliz

2.1. irlz34ns.pdf Size:180K _international_rectifier

IRLZ34NSPBF
IRLZ34NSPBF

PD - 91308A IRLZ34NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ34NS) Low-profile through-hole (IRLZ34NL) 175C Operating Temperature RDS(on) = 0.035? Fast Switching G Fully Avalanche Rated ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

 3.1. irlz34npbf.pdf Size:225K _upd

IRLZ34NSPBF
IRLZ34NSPBF

PD - 94830 IRLZ34NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.035Ω l Fully Avalanche Rated G l Lead-Free ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

3.2. irlz34n 1.pdf Size:51K _philips

IRLZ34NSPBF
IRLZ34NSPBF

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A low on

 3.3. irlz34n 1.pdf Size:51K _international_rectifier

IRLZ34NSPBF
IRLZ34NSPBF

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A low on

3.4. irlz34n.pdf Size:104K _international_rectifier

IRLZ34NSPBF
IRLZ34NSPBF

PD - 9.1307B IRLZ34N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.035? Fast Switching G Fully Avalanche Rated ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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