IRLZ34NSPBF - Даташиты. Аналоги. Основные параметры

PD - 95583IRLZ34NSPbFIRLZ34NLPbFl Logic-Level Gate Drive HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRLZ34NS)VDSS = 55Vl Low-profile through-hole (IRLZ34NL)l 175C Operating TemperatureRDS(on) = 0.035l Fast SwitchingGl Fully Avalanche RatedID = 30Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutiliz

PD - 91308AIRLZ34NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ34NS) Low-profile through-hole (IRLZ34NL) 175C Operating TemperatureRDS(on) = 0.035 Fast SwitchingG Fully Avalanche RatedID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 30 A

PD - 94830IRLZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.035l Fully Avalanche RatedGl Lead-FreeID = 30ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

PD - 9.1307BIRLZ34NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.035 Fast SwitchingG Fully Avalanche RatedID = 30ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 30 A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ34N IIRLZ34NFEATURESStatic drain-source on-resistance:RDS(on) 35mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R