IRFL014 Datasheet and Replacement
Type Designator: IRFL014
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SOT223
IRFL014 substitution
IRFL014 Datasheet (PDF)
irfl014pbf.pdf
PD- 95227IRFL014PbF_ Lead-Free04/28/04Document Number: 91191 www.vishay.com1IRFL014PbFDocument Number: 91191 www.vishay.com2IRFL014PbFDocument Number: 91191 www.vishay.com3IRFL014PbFDocument Number: 91191 www.vishay.com4IRFL014PbFDocument Number: 91191 www.vishay.com5IRFL014PbFDocument Number: 91191 www.vishay.com6IRFL014PbFDocument Number: 9119
irfl014 sihfl014.pdf
IRFL014, SiHFL014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) ()VGS = 10 V 0.20 Surface Mount Available in Tape and ReelQg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 3.1 Fast SwitchingQgd (nC) 5.8 Ease of ParallelingConfiguration Single Simple Drive Requirements
irfl014npbf.pdf
PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on
Datasheet: IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRFIZ44N , IRFIZ46N , IRFIZ48N , P55NF06 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 .
History: NP88N055KHE
Keywords - IRFL014 MOSFET datasheet
IRFL014 cross reference
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IRFL014 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: NP88N055KHE
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