All MOSFET. IRFL014 Datasheet

 

IRFL014 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFL014
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11(max) nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SOT223

 IRFL014 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFL014 Datasheet (PDF)

 ..1. Size:176K  international rectifier
 irfl014.pdf

IRFL014 IRFL014

 ..2. Size:811K  international rectifier
 irfl014pbf.pdf

IRFL014 IRFL014

PD- 95227IRFL014PbF_ Lead-Free04/28/04Document Number: 91191 www.vishay.com1IRFL014PbFDocument Number: 91191 www.vishay.com2IRFL014PbFDocument Number: 91191 www.vishay.com3IRFL014PbFDocument Number: 91191 www.vishay.com4IRFL014PbFDocument Number: 91191 www.vishay.com5IRFL014PbFDocument Number: 91191 www.vishay.com6IRFL014PbFDocument Number: 9119

 ..3. Size:998K  vishay
 irfl014 sihfl014.pdf

IRFL014 IRFL014

IRFL014, SiHFL014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) ()VGS = 10 V 0.20 Surface Mount Available in Tape and ReelQg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 3.1 Fast SwitchingQgd (nC) 5.8 Ease of ParallelingConfiguration Single Simple Drive Requirements

 0.1. Size:158K  international rectifier
 irfl014npbf.pdf

IRFL014 IRFL014

PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on

 0.2. Size:215K  international rectifier
 auirfl014n.pdf

IRFL014 IRFL014

AUTOMOTIVE GRADEAUIRFL014NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Dynamic dV/dT Rating 150C Operating TemperatureRDS(on) max.0.16G Fast Switching Fully Avalanche RatedS Repetitive Avalanche Allowed up to Tjmax ID 1.9A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed f

 0.3. Size:144K  international rectifier
 irfl014n.pdf

IRFL014 IRFL014

PD- 92003AIRFL014NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.16 Fast SwitchingG Fully Avalanche RatedID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silic

 0.4. Size:158K  infineon
 irfl014npbf.pdf

IRFL014 IRFL014

PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on

Datasheet: IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRFIZ44N , IRFIZ46N , IRFIZ48N , 2SK3878 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 .

 

 
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