All MOSFET. IRFL214 Datasheet

 

IRFL214 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFL214

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 0.79 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 140 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: SOT223

IRFL214 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFL214 Datasheet (PDF)

1.1. irfl214.pdf Size:174K _international_rectifier

IRFL214
IRFL214

1.2. irfl214pbf.pdf Size:228K _international_rectifier

IRFL214
IRFL214

PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 250V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 2.0? Ease of Paralleling G Simple Drive Requirements Lead-Free ID = 0.79A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switchin

 1.3. irfl214 sihfl214.pdf Size:925K _vishay

IRFL214
IRFL214

IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition RDS(on) (?)VGS = 10 V 2.0 Surface Mount Qg (Max.) (nC) 8.2 Available in Tape and Reel Qgs (nC) 1.8 Dynamic dV/dt Rating Qgd (nC) 4.5 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleling Simple Drive

Datasheet: IRFIZ44N , IRFIZ46N , IRFIZ48N , IRFL014 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , STF5N52U , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , IRFM044 , IRFM054 , IRFM110A .

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