All MOSFET. IRHQ9110 Datasheet

 

IRHQ9110 Datasheet and Replacement


   Type Designator: IRHQ9110
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.3 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: LCC28
 

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IRHQ9110 Datasheet (PDF)

 ..1. Size:132K  international rectifier
 irhq9110.pdf pdf_icon

IRHQ9110

PD - 93794AIRHQ9110100V, QUAD P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETMOSFET TECHNOLOGY SURFACE MOUNT (LCC-28)Product Summary Part Number Radiation Level RDS(on) IDIRHQ9110 100K Rads (Si) 1.1 -2.3AIRHQ93110 300K Rads (Si) 1.1 -2.3ALCC-28International Rectifiers RAD-HardTM HEXFET MOSFETtechnology provides high performance power MOSFET

Datasheet: IRHE7110 , IRHE9110 , IRHQ567110 , IRHQ57110 , IRHQ57214SE , IRHQ597110 , IRHQ6110 , IRHQ7110 , IRF9540 , IRLU3705ZPBF , IRLU3714 , IRLU3714PBF , IRLU3714ZPBF , IRLU3715 , IRLU3715PBF , IRLU3715ZPBF , IRLU3717PBF .

Keywords - IRHQ9110 MOSFET datasheet

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