IRHQ9110 PDF and Equivalents Search

 

IRHQ9110 Specs and Replacement

Type Designator: IRHQ9110

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: LCC28

IRHQ9110 substitution

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IRHQ9110 datasheet

 ..1. Size:132K  international rectifier
 irhq9110.pdf pdf_icon

IRHQ9110

PD - 93794A IRHQ9110 100V, QUAD P-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHQ9110 100K Rads (Si) 1.1 -2.3A IRHQ93110 300K Rads (Si) 1.1 -2.3A LCC-28 International Rectifier s RAD-HardTM HEXFET MOSFET technology provides high performance power MOSFET... See More ⇒

Detailed specifications: IRHE7110, IRHE9110, IRHQ567110, IRHQ57110, IRHQ57214SE, IRHQ597110, IRHQ6110, IRHQ7110, 2N7000, IRLU3705ZPBF, IRLU3714, IRLU3714PBF, IRLU3714ZPBF, IRLU3715, IRLU3715PBF, IRLU3715ZPBF, IRLU3717PBF

Keywords - IRHQ9110 MOSFET specs

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