All MOSFET. IRLR4343 Datasheet

 

IRLR4343 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLR4343
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO252

 IRLR4343 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLR4343 Datasheet (PDF)

 ..1. Size:249K  international rectifier
 irlr4343 irlu4343.pdf

IRLR4343 IRLR4343

PD - 95851DIGITAL AUDIO MOSFETIRLR4343IRLU4343IRLU4343-701Featuresl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for Class-D Audio Amplifier ApplicationsVDS55 Vl Low RDSON for Improved EfficiencyRDS(ON) typ. @ VGS = 10V m:42l Low Qg and Qsw for Better THD and ImprovedRDS(ON) typ. @ VGS = 4.5V m:57 EfficiencyQg typ.l Low Qrr for Bett

 ..2. Size:302K  international rectifier
 irlr4343pbf irlu4343pbf.pdf

IRLR4343 IRLR4343

PD - 95394ADIGITAL AUDIO MOSFETIRLR4343PbFIRLU4343PbFIRLU4343-701PbFFeaturesl Advanced Process Technologyl Key Parameters Optimized for Class-D Audio Key Parameters Amplifier ApplicationsVDS55 Vl Low RDSON for Improved EfficiencyRDS(ON) typ. @ VGS = 10V m42l Low Qg and Qsw for Better THD and ImprovedRDS(ON) typ. @ VGS = 4.5V m57 Efficiencyl Low Qrr for Better

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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