All MOSFET. IRLU8203PBF Datasheet

 

IRLU8203PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLU8203PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO251

 IRLU8203PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLU8203PBF Datasheet (PDF)

 ..1. Size:273K  international rectifier
irlu8203pbf irlr8203pbf.pdf

IRLU8203PBF
IRLU8203PBF

PD - 95095AIRLR8203PbFSMPS MOSFETIRLU8203PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High Frequency Isolated DC-DC 30V 6.8m 110A Converters with Synchronous Rectification for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedance D-Pak I-Pakl Very Low RDS(on) at 4.5V

 8.1. Size:363K  international rectifier
irlu8259pbf irlr8259pbf.pdf

IRLU8203PBF
IRLU8203PBF

PD - 97360IRLR8259PbFIRLU8259PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully

 8.2. Size:284K  international rectifier
irlu8256pbf irlr8256pbf.pdf

IRLU8203PBF
IRLU8203PBF

PD - 96208AIRLR8256PbFIRLU8256PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsl Very Low RDS(on) at 4.5V VGSS Sl Ultra-Low Gate ImpedanceDG Gl Fully Char

 8.3. Size:361K  infineon
irlr8259pbf irlu8259pbf.pdf

IRLU8203PBF
IRLU8203PBF

PD - 97360IRLR8259PbFIRLU8259PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully

 8.4. Size:261K  inchange semiconductor
irlu8259.pdf

IRLU8203PBF
IRLU8203PBF

isc N-Channel MOSFET Transistor IRLU8259FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 8.5. Size:261K  inchange semiconductor
irlu8256.pdf

IRLU8203PBF
IRLU8203PBF

isc N-Channel MOSFET Transistor IRLU8256FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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