Справочник MOSFET. IRLU8203PBF

 

IRLU8203PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLU8203PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 33 nC
   trⓘ - Время нарастания: 99 ns
   Cossⓘ - Выходная емкость: 1200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0068 Ohm
   Тип корпуса: TO251

 Аналог (замена) для IRLU8203PBF

 

 

IRLU8203PBF Datasheet (PDF)

 ..1. Size:273K  international rectifier
 irlu8203pbf irlr8203pbf.pdf

IRLU8203PBF IRLU8203PBF

PD - 95095AIRLR8203PbFSMPS MOSFETIRLU8203PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High Frequency Isolated DC-DC 30V 6.8m 110A Converters with Synchronous Rectification for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedance D-Pak I-Pakl Very Low RDS(on) at 4.5V

 8.1. Size:363K  international rectifier
 irlu8259pbf irlr8259pbf.pdf

IRLU8203PBF IRLU8203PBF

PD - 97360IRLR8259PbFIRLU8259PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully

 8.2. Size:284K  international rectifier
 irlu8256pbf irlr8256pbf.pdf

IRLU8203PBF IRLU8203PBF

PD - 96208AIRLR8256PbFIRLU8256PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsl Very Low RDS(on) at 4.5V VGSS Sl Ultra-Low Gate ImpedanceDG Gl Fully Char

 8.3. Size:361K  infineon
 irlr8259pbf irlu8259pbf.pdf

IRLU8203PBF IRLU8203PBF

PD - 97360IRLR8259PbFIRLU8259PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully

 8.4. Size:261K  inchange semiconductor
 irlu8259.pdf

IRLU8203PBF IRLU8203PBF

isc N-Channel MOSFET Transistor IRLU8259FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 8.5. Size:261K  inchange semiconductor
 irlu8256.pdf

IRLU8203PBF IRLU8203PBF

isc N-Channel MOSFET Transistor IRLU8256FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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