IRLR9343PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLR9343PBF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 79
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 150
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105
Ohm
Package:
TO252
IRLR9343PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLR9343PBF
Datasheet (PDF)
..1. Size:303K international rectifier
irlr9343pbf irlu9343pbf.pdf
PD - 95386ADIGITAL AUDIO MOSFETIRLR9343PbFIRLU9343PbFIRLU9343-701PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for Class-D Audio Amplifier ApplicationsVDS-55 Vl Low RDSON for Improved EfficiencyRDS(ON) typ. @ VGS = -10V m93l Low Qg and Qsw for Better THD and ImprovedRDS(ON) typ. @ VGS = -4.5V m150 EfficiencyQg typ.l Low
..2. Size:303K infineon
irlr9343pbf irlu9343pbf irlu9343-701pbf.pdf
PD - 95386ADIGITAL AUDIO MOSFETIRLR9343PbFIRLU9343PbFIRLU9343-701PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for Class-D Audio Amplifier ApplicationsVDS-55 Vl Low RDSON for Improved EfficiencyRDS(ON) typ. @ VGS = -10V m93l Low Qg and Qsw for Better THD and ImprovedRDS(ON) typ. @ VGS = -4.5V m150 EfficiencyQg typ.l Low
6.1. Size:248K international rectifier
irlu9343-701 irlr9343.pdf
PD - 95850DIGITAL AUDIO MOSFETIRLR9343IRLU9343IRLU9343-701Featuresl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for Class-D Audio Amplifier ApplicationsVDS-55 Vl Low RDSON for Improved EfficiencyRDS(ON) typ. @ VGS = -10V m:93l Low Qg and Qsw for Better THD and ImprovedRDS(ON) typ. @ VGS = -4.5V m:150 EfficiencyQg typ.l Low Qrr for
6.2. Size:842K cn vbsemi
irlr9343tr.pdf
IRLR9343TRwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge C
6.3. Size:314K inchange semiconductor
irlr9343.pdf
isc P-Channel MOSFET Transistor IRLR9343FEATURESStatic drain-source on-resistance:RDS(on)105m175 Operating Junction Temperature100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
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