IRLR9343PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLR9343PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO252
IRLR9343PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLR9343PBF Datasheet (PDF)
irlr9343pbf irlu9343pbf.pdf
PD - 95386ADIGITAL AUDIO MOSFETIRLR9343PbFIRLU9343PbFIRLU9343-701PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for Class-D Audio Amplifier ApplicationsVDS-55 Vl Low RDSON for Improved EfficiencyRDS(ON) typ. @ VGS = -10V m93l Low Qg and Qsw for Better THD and ImprovedRDS(ON) typ. @ VGS = -4.5V m150 EfficiencyQg typ.l Low
irlr9343pbf irlu9343pbf irlu9343-701pbf.pdf
PD - 95386ADIGITAL AUDIO MOSFETIRLR9343PbFIRLU9343PbFIRLU9343-701PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for Class-D Audio Amplifier ApplicationsVDS-55 Vl Low RDSON for Improved EfficiencyRDS(ON) typ. @ VGS = -10V m93l Low Qg and Qsw for Better THD and ImprovedRDS(ON) typ. @ VGS = -4.5V m150 EfficiencyQg typ.l Low
irlu9343-701 irlr9343.pdf
PD - 95850DIGITAL AUDIO MOSFETIRLR9343IRLU9343IRLU9343-701Featuresl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for Class-D Audio Amplifier ApplicationsVDS-55 Vl Low RDSON for Improved EfficiencyRDS(ON) typ. @ VGS = -10V m:93l Low Qg and Qsw for Better THD and ImprovedRDS(ON) typ. @ VGS = -4.5V m:150 EfficiencyQg typ.l Low Qrr for
irlr9343tr.pdf
IRLR9343TRwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge C
irlr9343.pdf
isc P-Channel MOSFET Transistor IRLR9343FEATURESStatic drain-source on-resistance:RDS(on)105m175 Operating Junction Temperature100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
