IRLR9343PBF - описание и поиск аналогов

PD - 95386A DIGITAL AUDIO MOSFET IRLR9343PbF IRLU9343PbF IRLU9343-701PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for Class-D Audio Amplifier Applications VDS -55 V l Low RDSON for Improved Efficiency RDS(ON) typ. @ VGS = -10V m 93 l Low Qg and Qsw for Better THD and Improved RDS(ON) typ. @ VGS = -4.5V m 150 Efficiency Qg typ. l Low

PD - 95386A DIGITAL AUDIO MOSFET IRLR9343PbF IRLU9343PbF IRLU9343-701PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for Class-D Audio Amplifier Applications VDS -55 V l Low RDSON for Improved Efficiency RDS(ON) typ. @ VGS = -10V m 93 l Low Qg and Qsw for Better THD and Improved RDS(ON) typ. @ VGS = -4.5V m 150 Efficiency Qg typ. l Low

PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for Class-D Audio Amplifier Applications VDS -55 V l Low RDSON for Improved Efficiency RDS(ON) typ. @ VGS = -10V m 93 l Low Qg and Qsw for Better THD and Improved RDS(ON) typ. @ VGS = -4.5V m 150 Efficiency Qg typ. l Low Qrr for

IRLR9343TR www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge C

isc P-Channel MOSFET Transistor IRLR9343 FEATURES Static drain-source on-resistance RDS(on) 105m 175 Operating Junction Temperature 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source