IRLU2705PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLU2705PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 68
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO251
IRLU2705PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLU2705PBF
Datasheet (PDF)
..1. Size:260K international rectifier
irlu2705pbf irlr2705pbf.pdf
PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp
..2. Size:260K infineon
irlr2705pbf irlu2705pbf.pdf
PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp
6.1. Size:260K inchange semiconductor
irlu2705.pdf
isc N-Channel MOSFET Transistor IRLU2705FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
7.1. Size:313K international rectifier
irlu2703pbf irlr2703pbf.pdf
PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te
7.2. Size:313K infineon
irlr2703 irlu2703.pdf
PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te
7.3. Size:261K inchange semiconductor
irlu2703.pdf
isc N-Channel MOSFET Transistor IRLU2703FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
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