IRLR2905ZPBF PDF and Equivalents Search

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem... See More ⇒

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem... See More ⇒

PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.5m Fast Switching G ID (Silicon Limited) 60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automot... See More ⇒

AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 13.5m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 60A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Desc... See More ⇒

IRLR2905ZTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limi... See More ⇒

isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905Z FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V G... See More ⇒