Справочник MOSFET. IRLR2905ZPBF

 

IRLR2905ZPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLR2905ZPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 23 nC
   trⓘ - Время нарастания: 130 ns
   Cossⓘ - Выходная емкость: 230 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRLR2905ZPBF

 

 

IRLR2905ZPBF Datasheet (PDF)

 ..1. Size:328K  international rectifier
 irlu2905zpbf irlr2905zpbf.pdf

IRLR2905ZPBF IRLR2905ZPBF

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

 ..2. Size:340K  infineon
 irlr2905zpbf irlu2905zpbf.pdf

IRLR2905ZPBF IRLR2905ZPBF

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

 5.1. Size:273K  international rectifier
 auirlr2905ztr.pdf

IRLR2905ZPBF IRLR2905ZPBF

PD - 97583AUTOMOTIVE GRADEAUIRLR2905ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.13.5m Fast SwitchingGID (Silicon Limited)60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantSID (Package Limited) 42A Automot

 5.2. Size:660K  infineon
 auirlr2905z.pdf

IRLR2905ZPBF IRLR2905ZPBF

AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 13.5m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 60A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Desc

 5.3. Size:836K  cn vbsemi
 irlr2905ztr.pdf

IRLR2905ZPBF IRLR2905ZPBF

IRLR2905ZTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limi

 5.4. Size:242K  inchange semiconductor
 irlr2905z.pdf

IRLR2905ZPBF IRLR2905ZPBF

isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905ZFEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV G

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