IRLU2908PBF MOSFET Datasheet: N-Ch, 80V, 30A. Full specification with pinout and replacement list

IRLU2908PBF Specs and Replacement

   Type Designator: IRLU2908PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO251

IRLU2908PBF substitution

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IRLU2908PBF datasheet

..1. Size:335K international rectifier
irlr2908pbf irlu2908pbf.pdf pdf_icon

PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 80V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 28m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ... See More ⇒

6.1. Size:261K inchange semiconductor
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isc N-Channel MOSFET Transistor IRLU2908 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

7.1. Size:314K international rectifier
irlr2905pbf irlu2905pbf.pdf pdf_icon

PD- 95084A IRLR/U2905PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027 l Fast Switching G l Fully Avalanche Rated ID = 42A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t... See More ⇒

7.2. Size:328K international rectifier
irlu2905zpbf irlr2905zpbf.pdf pdf_icon

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem... See More ⇒