Справочник MOSFET. IRLU2908PBF

 

IRLU2908PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLU2908PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   trⓘ - Время нарастания: 95 ns
   Cossⓘ - Выходная емкость: 260 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: TO251

 Аналог (замена) для IRLU2908PBF

 

 

IRLU2908PBF Datasheet (PDF)

 ..1. Size:335K  international rectifier
irlr2908pbf irlu2908pbf.pdf

IRLU2908PBF
IRLU2908PBF

PD - 95552BIRLR2908PbFIRLU2908PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 80V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processing techniquesto achieve

 ..2. Size:335K  infineon
irlr2908pbf irlu2908pbf.pdf

IRLU2908PBF
IRLU2908PBF

PD - 95552BIRLR2908PbFIRLU2908PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 80V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processing techniquesto achieve

 6.1. Size:261K  inchange semiconductor
irlu2908.pdf

IRLU2908PBF
IRLU2908PBF

isc N-Channel MOSFET Transistor IRLU2908FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 7.1. Size:314K  international rectifier
irlr2905pbf irlu2905pbf.pdf

IRLU2908PBF
IRLU2908PBF

PD- 95084AIRLR/U2905PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR2905)VDSS = 55Vl Straight Lead (IRLU2905)l Advanced Process TechnologyRDS(on) = 0.027l Fast SwitchingGl Fully Avalanche RatedID = 42Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing t

 7.2. Size:328K  international rectifier
irlu2905zpbf irlr2905zpbf.pdf

IRLU2908PBF
IRLU2908PBF

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

 7.3. Size:314K  infineon
irlr2905 irlu2905.pdf

IRLU2908PBF
IRLU2908PBF

PD- 95084AIRLR/U2905PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR2905)VDSS = 55Vl Straight Lead (IRLU2905)l Advanced Process TechnologyRDS(on) = 0.027l Fast SwitchingGl Fully Avalanche RatedID = 42Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing t

 7.4. Size:340K  infineon
irlr2905zpbf irlu2905zpbf.pdf

IRLU2908PBF
IRLU2908PBF

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

 7.5. Size:255K  inchange semiconductor
irlu2905z.pdf

IRLU2908PBF
IRLU2908PBF

isc N-Channel MOSFET Transistor IRLU2905ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top