All MOSFET. IRLS4030-7PPBF Datasheet

 

IRLS4030-7PPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLS4030-7PPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 370 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 190 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 140 nC

Rise Time (tr): 160 nS

Drain-Source Capacitance (Cd): 680 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0039 Ohm

Package: TO263CA7

IRLS4030-7PPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLS4030-7PPBF Datasheet (PDF)

1.1. irls4030-7ppbf.pdf Size:287K _international_rectifier

IRLS4030-7PPBF
IRLS4030-7PPBF

PD -97371 IRLS4030-7PPbF HEXFET® Power MOSFET Applications D l DC Motor Drive VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.2m Ω l Uninterruptible Power Supply l High Speed Power Switching G max. 3.9m Ω l Hard Switched and High Frequency Circuits ID 190A S Benefits l Optimized for Logic Level Drive D l Very Low RDS(ON) at 4.5V VGS l

2.1. irls4030pbf irlsl4030pbf.pdf Size:382K _international_rectifier

IRLS4030-7PPBF
IRLS4030-7PPBF

PD - 97370 IRLS4030PbF IRLSL4030PbF Applications HEXFET® Power MOSFET l DC Motor Drive D l High Efficiency Synchronous Rectification in SMPS VDSS 100V l Uninterruptible Power Supply RDS(on) typ. l High Speed Power Switching 3.4m Ω l Hard Switched and High Frequency Circuits G max. 4.3m Ω ID 180A S Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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