IRLML6302PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLML6302PBF
Marking Code: C*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.54
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.78
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.4
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 53
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package:
SOT23
IRLML6302PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLML6302PBF
Datasheet (PDF)
..1. Size:240K international rectifier
irlml6302pbf.pdf 
IRLML6302PbFl Generation V Technology HEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETG 1l SOT-23 FootprintVDSS = -20Vl Low Profile (
..2. Size:300K infineon
irlml6302pbf.pdf
PD - 94947BIRLML6302PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (
0.1. Size:236K international rectifier
irlml6302pbf-1.pdf
IRLML6302PbF-1HEXFET Power MOSFETVDS -20 VRDS(on) max 0.60 G 1(@V = -4.5V)GSQg (typical) 2.4 nC3 DID -0.78 A(@T = 25C)AS 2Micro3TMFeatures BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, In
5.1. Size:243K international rectifier
irlml6302gpbf.pdf
PD - 96159IRLML6302GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (
5.2. Size:100K international rectifier
irlml6302.pdf
PD - 9.1259DIRLML6302HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (
5.3. Size:146K tysemi
irlml6302.pdf
Product specificationIRLML6302PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETVDSS = -20Vl SOT-23 Footprintl Low Profile (
5.4. Size:914K cn vbsemi
irlml6302trpbf.pdf
IRLML6302TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI
5.5. Size:273K inchange semiconductor
irlml6302.pdf
Isc P-Channel MOSFET Transistor IRLML6302FEATURESWith SOT-23 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -2
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