IRLML6302PBF-1 MOSFET Datasheet: P-Ch, 20V, 0.78A. Full specification with pinout and replacement list

IRLML6302PBF-1 Specs and Replacement

Type Designator: IRLML6302PBF-1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: SOT23

IRLML6302PBF-1 substitution

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IRLML6302PBF-1 datasheet

..1. Size:236K international rectifier
irlml6302pbf-1.pdf pdf_icon

IRLML6302PbF-1 HEXFET Power MOSFET VDS -20 V RDS(on) max 0.60 G 1 (@V = -4.5V) GS Qg (typical) 2.4 nC 3 D ID -0.78 A (@T = 25 C) A S 2 Micro3TM Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, In... See More ⇒

2.1. Size:300K international rectifier
irlml6302pbf.pdf pdf_icon

PD - 94947B IRLML6302PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (... See More ⇒

5.1. Size:243K international rectifier
irlml6302gpbf.pdf pdf_icon

PD - 96159 IRLML6302GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (... See More ⇒

5.2. Size:100K international rectifier
irlml6302.pdf pdf_icon

PD - 9.1259D IRLML6302 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (... See More ⇒