IRLHS6276PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLHS6276PBF
Marking Code: 6276
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.1 nC
trⓘ - Rise Time: 9.3 nS
Cossⓘ - Output Capacitance: 79 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: DFN2X2-6
IRLHS6276PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLHS6276PBF Datasheet (PDF)
irlhs6276pbf.pdf
IRLHS6276PbFHEXFET Power MOSFETVDS20 VVGS12 VRDS(on) max D145 mG2(@VGS = 4.5V)S2 D1D2RDS(on) max 62 m(@VGS = 2.5V)S1G1ID D23.4 A(@Tc(Bottom) = 25C)2mm x 2mm Dual PQFNApplications Charge and discharge switch for battery application Load/System SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 45m)
irlhs6242pbf.pdf
PD - 97582BIRLHS6242PbFHEXFET Power MOSFETVDS20 VVGS V12RDS(on) max 11.7 mD(@VGS = 4.5V)DGDRDS(on) max 15.5 m(@VGS = 2.5V)DIDDS12 AS(@TC (Bottom) = 25C)2mm x 2mm PQFNApplications Charge and discharge switch for battery application System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 11.7m)
irlhs6242pbf.pdf
IRLHS6242PbFHEXFET Power MOSFETVDS20 VTOP VIEWVGS V12RDS(on) max D 1 6 D11.7 mD(@VGS = 4.5V)DGDRDS(on) max D 2 D 5 D15.5 m(@VGS = 2.5V)DIDSDG 3 4 SS12 AS(@TC (Bottom) = 25C)2mm x 2mm PQFNApplications Charge and discharge switch for battery application System/Load SwitchFeatures and BenefitsFeatures Resulting Benef
irlhs6342pbf.pdf
IRLHS6342PbFHEXFET Power MOSFETVDS30 VTOP VIEWVGS12 VD 1 6 DRDS(on) max D15.5 mD(@VGS = 4.5V)GD 2 D 5 D DQg (typical) 11 nCSG 3 4 SDIDDS12 AS(@TC (Bottom) = 25C)2mm x 2mm PQFNApplications Charge and discharge switch for battery application System/Load SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon (
irlhs6376pbf.pdf
IRLHS6376PbFHEXFET Power MOSFETVDS30 VVGS 12 VD1RDS(on) max 63 m G2(@VGS = 4.5V)S2 D1D2RDS(on) max 82 m(@VGS = 2.5V)S1G1ID D23.4 A(@Tc(Bottom) = 25C)2mm x 2mm Dual PQFNApplications Charge and discharge switch for battery application Load/System SwitchFeatures and BenefitsFeatures Resulting BenefitsLow RDSon ( 63m)
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRL530NS
History: IRL530NS
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918