All MOSFET. 2N7271H1 Datasheet

 

2N7271H1 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7271H1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO204

2N7271H1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N7271H1 Datasheet (PDF)

5.1. 2n7272 2n7275 2n7278 2n7281.pdf Size:177K _update-mosfet

2N7271H1 2N7271H1

 INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/604B be completed by 30 November 2004. 30 July 2004 SUPERSEDING MIL-PRF-19500/604A 21 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES

5.2. jansr2n7272.pdf Size:45K _intersil

2N7271H1 2N7271H1

JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 8A, 100V, rDS(ON) = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- • Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

 5.3. jansr2n7275.pdf Size:45K _intersil

2N7271H1 2N7271H1

JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 5A, 200V, rDS(ON) = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- • Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

5.4. jansr2n7278.pdf Size:45K _intersil

2N7271H1 2N7271H1

JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 4A, 250V, rDS(ON) = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- • Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

 5.5. 2n7272 2n7275 2n7278 2n7281.pdf Size:177K _no

2N7271H1 2N7271H1

 INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/604B be completed by 30 November 2004. 30 July 2004 SUPERSEDING MIL-PRF-19500/604A 21 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES

Datasheet: 2N7228JX , 2N7236 , 2N7237 , 2N7241 , 2N7242 , 2N7243 , 2N7244 , 2N7271H , BUZ90A , 2N7271H2 , 2N7271H3 , 2N7271H4 , 2N7271R , 2N7271R1 , 2N7271R2 , 2N7271R3 , 2N7271R4 .

 

 
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