IRLD120PBF Datasheet and Replacement
Type Designator: IRLD120PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 1.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: DIP4
- MOSFET Cross-Reference Search
IRLD120PBF Datasheet (PDF)
irld120pbf.pdf

PD-95979IRLD120PbF Lead-Free12/20/04Document Number: 91310 www.vishay.com1IRLD120PbFDocument Number: 91310 www.vishay.com2IRLD120PbFDocument Number: 91310 www.vishay.com3IRLD120PbFDocument Number: 91310 www.vishay.com4IRLD120PbFDocument Number: 91310 www.vishay.com5IRLD120PbFDocument Number: 91310 www.vishay.com6IRLD120PbFPeak Diode Recovery
irld120pbf sihld120.pdf

IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single
irld120 sihld120.pdf

IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: BSZ035N03LSG | SVF9N90F
Keywords - IRLD120PBF MOSFET datasheet
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History: BSZ035N03LSG | SVF9N90F



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