IRFN044 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFN044
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 44 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 88(max) nC
trⓘ - Rise Time: 130(max) nS
Cossⓘ - Output Capacitance: 1100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SMD1
IRFN044 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFN044 Datasheet (PDF)
irfn044.pdf
PD - 91545A IRFN044POWER MOSFET60V, N-CHANNELSURFACE MOUNT(SMD-1)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFN044 0.04 44AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-sistance combined with high transconductance. HEXFET
irfn044smd.pdf
IRFN044SMDSEMELABMECHANICAL DATANCHANNELPOWER MOSFET VDSS 60V ID(cont) 34A RDS(on) 0.040FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
irfn054.pdf
PD - 91543BIRFN054POWER MOSFET 60V, N-CHANNELHEXFET MOSFET TECHNOLOGYSURFACE MOUNT (SMD-1)Product SummaryPart Number RDS(on) IDIRFN054 0.020 55A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-sistance combined with high transconductance. HEXFET
irfn054smd.pdf
IRFN054SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 60V ID(cont) 45A RDS(on) 0.027FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
Datasheet: IRFM250 , IRFM340 , IRFM350 , IRFM360 , IRFM440 , IRFM460 , IRFM9140 , IRFM9240 , IRFZ24N , IRFN054 , IRFN130 , IRFN140 , IRFN150 , IRFN240 , IRFN250 , IRFN340 , IRFN350 .
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