All MOSFET. IRFI830GPBF Datasheet

 

IRFI830GPBF Datasheet and Replacement


   Type Designator: IRFI830GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220F
 

 IRFI830GPBF substitution

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IRFI830GPBF Datasheet (PDF)

 ..1. Size:1541K  vishay
 irfi830gpbf sihfi830g.pdf pdf_icon

IRFI830GPBF

IRFI830G, SiHFI830GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.5f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 6.1. Size:170K  international rectifier
 irfi830g.pdf pdf_icon

IRFI830GPBF

 6.2. Size:1540K  vishay
 irfi830g sihfi830g.pdf pdf_icon

IRFI830GPBF

IRFI830G, SiHFI830GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.5f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 7.1. Size:213K  1
 irfi830a irfw830a.pdf pdf_icon

IRFI830GPBF

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Datasheet: IRFI624GPBF , IRFI710B , IRFI734GPBF , IRFI740B , IRFW740B , IRFI744GPBF , IRFI7536GPBF , IRFI820GPBF , 4N60 , IRFI840GLCPBF , IRFI840GPBF , IRFI9520G , IRFI9520GPBF , IRFI9530GPBF , IRFI9540G , IRFI9540GPBF , IRFI9610G .

History: APT4080BN | 25N10G-TM3-T

Keywords - IRFI830GPBF MOSFET datasheet

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