IRFN140 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFN140
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 28 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 59(max) nC
trⓘ - Rise Time: 105(max) nS
Cossⓘ - Output Capacitance: 550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
Package: SMD1
IRFN140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFN140 Datasheet (PDF)
irfn140.pdf
PD - 91546CIRFN140JANTX2N7218UJANTXV2N7218UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN140 0.077 28AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
irfn140smd.pdf
IRFN140SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 13.9A RDS(on) 0.077FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. S
irfn150.pdf
PD - 91547CIRFN150JANTX2N7224UJANTXV2N7224UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN150 0.07 34AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
irfn130smd.pdf
IRFN130SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS 100VID(cont) 11ARDS(on) 0.19 FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTSSMD1 LIGHTWEIGHTPad 1 Source Pad 2 Drain Pad 3 Gate SCREENING OPTIONS AV
irfn130smd05 irfnj130.pdf
IRFNJ130NIRFN130SMD05MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max.APPLICATIONS 0.127 (0.005)1 3VDSS 100VID(cont) 11A2RDS(on) 0.19FEATURES 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020) HERMETICALLY SEALED 0.50 (0.020)max.7.26 (0.28
irfn150smd.pdf
IRFN150SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
Datasheet: IRFM360 , IRFM440 , IRFM460 , IRFM9140 , IRFM9240 , IRFN044 , IRFN054 , IRFN130 , HY1906P , IRFN150 , IRFN240 , IRFN250 , IRFN340 , IRFN350 , IRFN440 , IRFN450 , IRFN9130 .
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