All MOSFET. IRL8113LPBF Datasheet


IRL8113LPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRL8113LPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.25 V

Maximum Drain Current |Id|: 105 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 38 nS

Drain-Source Capacitance (Cd): 620 pF

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: TO262

IRL8113LPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRL8113LPBF Datasheet (PDF)

1.1. irl8113lpbf irl8113spbf irl8113pbf.pdf Size:279K _international_rectifier


PD - 95582 IRL8113PbF IRL8113SPbF IRL8113LPbF Applications HEXFET® Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg (Typ.) l Lead-Free 30V 6.0m 23nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRL8113 IRL8113S IRL8113L Absolute Maximum

4.1. irl8114pbf.pdf Size:423K _international_rectifier


IRL8114PbF HEXFET® Power MOSFET Application  Optimized for UPS/Inverter Applications VDSS 30V D  Low Voltage Power Tools RDS(on) typ. 3.5m max 4.5m G Benefits ID (Silicon Limited) 120A  Low RDS(on) at 4.5V VGS S  Low Gate Charge ID (Package Limited) 90A  Fully Characterized Capacitance and Avalanche SOA  Lead-Free


Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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