All MOSFET. IRL8114PBF Datasheet

 

IRL8114PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRL8114PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 115 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.25 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 103 nS

Drain-Source Capacitance (Cd): 600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: TO220AB

IRL8114PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL8114PBF Datasheet (PDF)

1.1. irl8114pbf.pdf Size:423K _international_rectifier

IRL8114PBF
IRL8114PBF

IRL8114PbF HEXFET® Power MOSFET Application  Optimized for UPS/Inverter Applications VDSS 30V D  Low Voltage Power Tools RDS(on) typ. 3.5m max 4.5m G Benefits ID (Silicon Limited) 120A  Low RDS(on) at 4.5V VGS S  Low Gate Charge ID (Package Limited) 90A  Fully Characterized Capacitance and Avalanche SOA  Lead-Free

4.1. irl8113lpbf irl8113spbf irl8113pbf.pdf Size:279K _international_rectifier

IRL8114PBF
IRL8114PBF

PD - 95582 IRL8113PbF IRL8113SPbF IRL8113LPbF Applications HEXFET® Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg (Typ.) l Lead-Free 30V 6.0m 23nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRL8113 IRL8113S IRL8113L Absolute Maximum

 

Datasheet: IRFIB5N65APBF , IRFIB6N60APBF , IRFIB7N50APBF , IRFIB7N50LPBF , IRFIB8N50K , IRFIBC30GPBF , IRL8113LPBF , IRL8113SPBF , 2SK2611 , IRLB3034PBF , IRLB3036GPBF , IRLB3036PBF , IRLB3813PBF , IRLB4030PBF , IRLB8314PBF , IRLB8721PBF , IRLB8743PBF .

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