All MOSFET. IRL8114PBF Datasheet

 

IRL8114PBF Datasheet and Replacement


   Type Designator: IRL8114PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 103 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220AB
      - MOSFET Cross-Reference Search

 

IRL8114PBF Datasheet (PDF)

 ..1. Size:423K  international rectifier
irl8114pbf.pdf pdf_icon

IRL8114PBF

IRL8114PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30V D Low Voltage Power Tools RDS(on) typ. 3.5m max 4.5mGBenefits ID (Silicon Limited) 120A Low RDS(on) at 4.5V VGS S Low Gate Charge ID (Package Limited) 90A Fully Characterized Capacitance and Avalanche SOA Lead-Free

 7.1. Size:246K  inchange semiconductor
irl8114.pdf pdf_icon

IRL8114PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL8114IIRL8114FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 8.1. Size:279K  international rectifier
irl8113lpbf irl8113spbf irl8113pbf.pdf pdf_icon

IRL8114PBF

PD - 95582IRL8113PbFIRL8113SPbFIRL8113LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQg (Typ.)l Lead-Free30V 6.0m 23nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentTO-220AB D2Pak TO-262IRL8113 IRL8113S IRL8113LAbsolute Maximum

 8.2. Size:269K  inchange semiconductor
irl8113s.pdf pdf_icon

IRL8114PBF

isc N-Channel MOSFET Transistor IRL8113SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FRS130H | 2SJ455 | P1004HV | IXTB30N100L | WSD3042DN56 | IRLZ34NLPBF | HM60N03K

Keywords - IRL8114PBF MOSFET datasheet

 IRL8114PBF cross reference
 IRL8114PBF equivalent finder
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