IRL8114PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL8114PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 115 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.25 V
Maximum Drain Current |Id|: 90 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 103 nS
Drain-Source Capacitance (Cd): 600 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm
Package: TO220AB
IRL8114PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL8114PBF Datasheet (PDF)
1.1. irl8114pbf.pdf 
Size:423K _international_rectifier
IRL8114PbF HEXFET® Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30V D Low Voltage Power Tools RDS(on) typ. 3.5m max 4.5m G Benefits ID (Silicon Limited) 120A Low RDS(on) at 4.5V VGS S Low Gate Charge ID (Package Limited) 90A Fully Characterized Capacitance and Avalanche SOA Lead-Free
4.1. irl8113lpbf irl8113spbf irl8113pbf.pdf Size:279K _international_rectifier
PD - 95582 IRL8113PbF IRL8113SPbF IRL8113LPbF Applications HEXFET® Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg (Typ.) l Lead-Free 30V 6.0m 23nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRL8113 IRL8113S IRL8113L Absolute Maximum
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
