All MOSFET. IRLB4030PBF Datasheet

 

IRLB4030PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLB4030PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 370 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 180 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 130 nC

Rise Time (tr): 330 nS

Drain-Source Capacitance (Cd): 670 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0043 Ohm

Package: TO220AB

IRLB4030PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLB4030PBF Datasheet (PDF)

1.1. irlb4030pbf.pdf Size:280K _international_rectifier

IRLB4030PBF
IRLB4030PBF

PD - 97369 IRLB4030PbF Applications HEXFET® Power MOSFET l DC Motor Drive D l High Efficiency Synchronous Rectification in SMPS VDSS 100V l Uninterruptible Power Supply l High Speed Power Switching RDS(on) typ. 3.4mΩ l Hard Switched and High Frequency Circuits G max. 4.3m Ω ID 180A S Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superio

5.1. irlb4132.pdf Size:242K _international_rectifier

IRLB4030PBF
IRLB4030PBF

Approved (Not Released) PD - TBD IRLB4132PbF HEXFET® Power MOSFET Applications l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg l Low Voltage Power Tools 30V 3.5mΩ 36nC Benefits D l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at 4.5V VGS S D l Ultra-Low Gate Impedance G l Fully Characterized Avalanche Voltage TO-220AB and Curr

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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