IRFN250 MOSFET Datasheet: N-Ch, 200V, 27.4A. Full specification with pinout and replacement list

IRFN250 Specs and Replacement

Type Designator: IRFN250

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 max nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SMD1

IRFN250 substitution

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IRFN250 datasheet

..1. Size:155K international rectifier
irfn250.pdf pdf_icon

PD - 91549C IRFN250 JANTX2N7225U JANTXV2N7225U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN250 0.100 27.4A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re... See More ⇒

0.1. Size:23K semelab
irfn250smd.pdf pdf_icon

IRFN250SMD MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS ... See More ⇒

8.1. Size:226K semelab
irfn254.pdf pdf_icon

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9.1. Size:167K international rectifier
irfn240.pdf pdf_icon

PD - 91548C IRFN240 JANTX2N7219U JANTXV2N7219U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 18A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- ... See More ⇒