IRL6297SDPBF Specs and Replacement
Type Designator: IRL6297SDPBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ -
Output Capacitance: 610 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
Package: DIRECTFET
IRL6297SDPBF substitution
- MOSFET ⓘ Cross-Reference Search
IRL6297SDPBF datasheet
..1. Size:260K international rectifier
irl6297sdpbf.pdf 
IRL6297SDPbF DirectFET Dual N-Channel Power MOSFET Typical values (unless otherwise specified) Applications VDSS VGS RDS(on) RDS(on) l Charge and Discharge Switch for Battery Application l Isolation Switch for Input Power or Battery Application 20V max 12V max 3.8m @4.5V 5.4m @2.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits 27nC 9.5nC 1.4nC 21nC 15nC 0.80V l ... See More ⇒
9.3. Size:1412K international rectifier
irl620spbf.pdf
PD- 95591 IRL620SPbF Lead-Free 07/21/04 Document Number 91302 www.vishay.com 1 IRL620SPbF Document Number 91302 www.vishay.com 2 IRL620SPbF Document Number 91302 www.vishay.com 3 IRL620SPbF Document Number 91302 www.vishay.com 4 IRL620SPbF Document Number 91302 www.vishay.com 5 IRL620SPbF Document Number 91302 www.vishay.com 6 IRL620SPbF Peak Diode Recovery... See More ⇒
9.4. Size:334K international rectifier
irl620s.pdf
PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel VDSS = 200V Dynamic dv/dt Rating Repetitive Avalanche Rated RDS(on) = 0.80 Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized ... See More ⇒
9.5. Size:287K international rectifier
irl620.pdf
PD -9.1217 IRL620 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 200V Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V RDS(on) = 0.80 Fast Switching Ease of paralleling Simple Drive Requirements ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rug... See More ⇒
9.6. Size:510K international rectifier
irl6283m.pdf
StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications Typical values (unless otherwise specified) ORing, eFuse, and high current load switch VDSS VGS Vgs(th) RDS(on) RDS(on) RDS(on) Load switch for battery 20V max 12V max 0.8V 0.50m @10V 0.65m @4.5V 1.1m @2.5V application Inverter switches for DC motor application S S ... See More ⇒
9.7. Size:1359K international rectifier
irl620pbf.pdf
PD- 95670 IRL620PbF Lead-Free 8/2/04 Document Number 91301 www.vishay.com 1 IRL620PbF Document Number 91301 www.vishay.com 2 IRL620PbF Document Number 91301 www.vishay.com 3 IRL620PbF Document Number 91301 www.vishay.com 4 IRL620PbF Document Number 91301 www.vishay.com 5 IRL620PbF Document Number 91301 www.vishay.com 6 IRL620PbF Document Number 91301 www.v... See More ⇒
9.9. Size:2134K vishay
irl620s sihl620s.pdf
IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount VDS (V) 200 Available Available in Tape and Reel RDS(on) ( )VGS = 10 V 0.80 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 16 Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 V Configuration Singl... See More ⇒
9.10. Size:2119K vishay
irl620 sihl620.pdf
IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.80 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.7 Fast Switching Qgd (nC) 9.6 Ease of paralleling Configuration Single ... See More ⇒
9.11. Size:1464K vishay
irl620spbf sihl620s.pdf
IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V... See More ⇒
9.12. Size:2122K vishay
irl620pbf sihl620.pdf
IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.80 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.7 Fast Switching Qgd (nC) 9.6 Ease of paralleling Configuration Single ... See More ⇒
9.13. Size:1439K vishay
irl620s sihl620s 2.pdf
IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V... See More ⇒
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