IRL6297SDPBF - параметры транзистора MOSFET, его аналоги, datasheet

IRL6297SDPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: IRL6297SDPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 54 nC
   trⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 610 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0049 Ohm
   Тип корпуса: DIRECTFET

Аналог (замена) для IRL6297SDPBF

IRL6297SDPBF Datasheet (PDF)

..1. Size:260K international rectifier
irl6297sdpbf.pdf

IRL6297SDPbFDirectFET Dual N-Channel Power MOSFET Typical values (unless otherwise specified)ApplicationsVDSS VGS RDS(on) RDS(on) l Charge and Discharge Switch for Battery Applicationl Isolation Switch for Input Power or Battery Application 20V max 12V max 3.8m@4.5V 5.4m@2.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits27nC 9.5nC 1.4nC 21nC 15nC 0.80Vl

9.1. Size:196K 1
irl620a.pdf

9.2. Size:41K 1
irl621 irl631 irl641.pdf

9.3. Size:1412K international rectifier
irl620spbf.pdf

PD- 95591IRL620SPbF Lead-Free07/21/04Document Number: 91302 www.vishay.com1IRL620SPbFDocument Number: 91302 www.vishay.com2IRL620SPbFDocument Number: 91302 www.vishay.com3IRL620SPbFDocument Number: 91302 www.vishay.com4IRL620SPbFDocument Number: 91302 www.vishay.com5IRL620SPbFDocument Number: 91302 www.vishay.com6IRL620SPbFPeak Diode Recovery

9.4. Size:334K international rectifier
irl620s.pdf

PD -9.1218IRL620SHEXFET Power MOSFETSurface MountAvailable in Tape & ReelVDSS = 200VDynamic dv/dt RatingRepetitive Avalanche RatedRDS(on) = 0.80Logic-Level Gate DriveRDS(on) Specified at VGS=4V & 5VFast SwitchingID = 5.2ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized

9.5. Size:287K international rectifier
irl620.pdf

PD -9.1217IRL620HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 200VLogic-Level Gate DriveRDS(ON) Specified at VGS = 4V & 5VRDS(on) = 0.80Fast SwitchingEase of parallelingSimple Drive RequirementsID = 5.2ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, rug

9.6. Size:510K international rectifier
irl6283m.pdf

StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications Typical values (unless otherwise specified) ORing, eFuse, and high current load switchVDSS VGS Vgs(th) RDS(on) RDS(on) RDS(on) Load switch for battery 20V max 12V max 0.8V 0.50m@10V 0.65m@4.5V 1.1m@2.5V applicationInverter switches for DC motor application S S

9.7. Size:1359K international rectifier
irl620pbf.pdf

PD- 95670IRL620PbF Lead-Free8/2/04Document Number: 91301 www.vishay.com1IRL620PbFDocument Number: 91301 www.vishay.com2IRL620PbFDocument Number: 91301 www.vishay.com3IRL620PbFDocument Number: 91301 www.vishay.com4IRL620PbFDocument Number: 91301 www.vishay.com5IRL620PbFDocument Number: 91301 www.vishay.com6IRL620PbFDocument Number: 91301 www.v

9.8. Size:18K samsung
irlz1x irlz2x irlz3x irlz4x irl51x irl52x irl53x irl54x irl61x irl62x irl63x irl64x.pdf

9.9. Size:2134K vishay
irl620s sihl620s.pdf

IRL620S, SiHL620SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 200Available Available in Tape and ReelRDS(on) ()VGS = 10 V 0.80RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 16 Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Singl

9.10. Size:2119K vishay
irl620 sihl620.pdf

IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single

9.11. Size:1464K vishay
irl620spbf sihl620s.pdf

IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V

9.12. Size:2122K vishay
irl620pbf sihl620.pdf