IRL5NJ024 Datasheet and Replacement
Type Designator: IRL5NJ024
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 133 nS
Cossⓘ - Output Capacitance: 137 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SMD-0.5
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IRL5NJ024 Datasheet (PDF)
irl5nj024.pdf

PD - 93955ALOGIC LEVEL IRL5NJ024HEXFET POWER MOSFET55V, N-CHANNELSURFACE MOUNT (SMD-0.5)Product Summary Part Number BVDSS RDS(on) IDIRL5NJ024 55V 0.06 17AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theF
irl5nj7413.pdf

PD - 94271BIRL5NJ7413HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 30V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRL5NJ7413 30V 0.014 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:
irl5nj7404.pdf

PD-94052BLOGIC LEVEL IRL5NJ7404HEXFET POWER MOSFET 20V, P-CHANNELSURFACE MOUNT (SMD-0.5)Product Summary Part Number BVDSS RDS(on) ID IRL5NJ7404 -20V 0.04 -11ASMD-0.5Fifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingFeatures:techniques to achieve the lowest possible on-resistancen Logic Level Gate Driveper silicon unit a
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK565 | MC08N005C | IRLR024 | CED05N8 | NTGS3130N | AON6794 | BL10N70-A
Keywords - IRL5NJ024 MOSFET datasheet
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History: 2SK565 | MC08N005C | IRLR024 | CED05N8 | NTGS3130N | AON6794 | BL10N70-A



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