IRFN440 Specs and Replacement

Type Designator: IRFN440

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 max nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: SMD1

IRFN440 substitution

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IRFN440 datasheet

 ..1. Size:181K  international rectifier
 irfn440.pdf pdf_icon

IRFN440

PD - 91552C IRFN440 JANTX2N7222U JANTXV2N7222U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN440 0.85 8.0A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- ... See More ⇒

 9.1. Size:182K  international rectifier
 irfn450.pdf pdf_icon

IRFN440

PD - 90418C IRFN450 JANTX2N7228U JANTXV2N7228U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 12A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- ... See More ⇒

Detailed specifications: IRFN054, IRFN130, IRFN140, IRFN150, IRFN240, IRFN250, IRFN340, IRFN350, 2SK3568, IRFN450, IRFN9130, IRFN9130SMD, IRFN9140, IRFN9140SMD, IRFN9240, IRFP044, IRFP044N

Keywords - IRFN440 MOSFET specs

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