IRL3713PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL3713PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 260 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 3130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220AB
IRL3713PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL3713PBF Datasheet (PDF)
irl3713pbf irl3713spbf irl3713lpbf.pdf
PD - 97011BIRL3713PbFSMPS MOSFET IRL3713SPbFIRL3713LPbFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max (mW) ID for Telecom and Industrial Use30V 3.0@VGS = 10V 260Al High Frequency Buck Converters forComputer Processor Powerl 100% RG Testedl Lead-FreeBenefitsl Ultra-Low Gate Impedancel
irl3713 irl3713l irl3713s.pdf
PD - 94184DIRL3713SMPS MOSFETIRL3713SIRL3713LApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max (mW) ID for Telecom and Industrial Use30V 3.0@VGS = 10V 260Al High Frequency Buck Converters forComputer Processor Powerl 100% RG TestedBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at
irl3713.pdf
PD - 94184CIRL3713SMPS MOSFETIRL3713SIRL3713LHEXFET Power MOSFETApplications)VDSS RDS(on) max (m) ID))) High Frequency Isolated DC-DC Converters with Synchronous Rectification 30V 3.0@VGS = 10V 260A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at
irl3713spbf.pdf
SMPS MOSFETIRL3713SPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max (mW) IDl High Frequency Isolated DC-DC30V 3.0@VGS = 10V 260AConverters with Synchronous Rectificationfor Telecom and Industrial Usel High Frequency Buck Converters for ComputerProcessor Powerl 100% RG TestedBenefitsl Ultra-Low Gate ImpedanceTO-220AB D2Pak TO-262l Very Low RDS(on) at 4.5V VGS
irl3713.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3713 IIRL3713FEATURESStatic drain-source on-resistance:RDS(on) 3.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
irl3713s.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3713SFEATURESWith TO-263(D2PAK) packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency isolated DC-DC converters withsynchronous rectification for telecom and industrial use
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: BUZ50B
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