Справочник MOSFET. IRL3713PBF

 

IRL3713PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRL3713PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 330 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 260 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 160 ns
   Cossⓘ - Выходная емкость: 3130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRL3713PBF

 

 

IRL3713PBF Datasheet (PDF)

 ..1. Size:721K  international rectifier
 irl3713pbf irl3713spbf irl3713lpbf.pdf

IRL3713PBF IRL3713PBF

PD - 97011BIRL3713PbFSMPS MOSFET IRL3713SPbFIRL3713LPbFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max (mW) ID for Telecom and Industrial Use30V 3.0@VGS = 10V 260Al High Frequency Buck Converters forComputer Processor Powerl 100% RG Testedl Lead-FreeBenefitsl Ultra-Low Gate Impedancel

 7.1. Size:239K  international rectifier
 irl3713 irl3713l irl3713s.pdf

IRL3713PBF IRL3713PBF

PD - 94184DIRL3713SMPS MOSFETIRL3713SIRL3713LApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max (mW) ID for Telecom and Industrial Use30V 3.0@VGS = 10V 260Al High Frequency Buck Converters forComputer Processor Powerl 100% RG TestedBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at

 7.2. Size:176K  international rectifier
 irl3713.pdf

IRL3713PBF IRL3713PBF

PD - 94184CIRL3713SMPS MOSFETIRL3713SIRL3713LHEXFET Power MOSFETApplications)VDSS RDS(on) max (m) ID))) High Frequency Isolated DC-DC Converters with Synchronous Rectification 30V 3.0@VGS = 10V 260A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at

 7.3. Size:278K  infineon
 irl3713spbf.pdf

IRL3713PBF IRL3713PBF

SMPS MOSFETIRL3713SPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max (mW) IDl High Frequency Isolated DC-DC30V 3.0@VGS = 10V 260AConverters with Synchronous Rectificationfor Telecom and Industrial Usel High Frequency Buck Converters for ComputerProcessor Powerl 100% RG TestedBenefitsl Ultra-Low Gate ImpedanceTO-220AB D2Pak TO-262l Very Low RDS(on) at 4.5V VGS

 7.4. Size:246K  inchange semiconductor
 irl3713.pdf

IRL3713PBF IRL3713PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3713 IIRL3713FEATURESStatic drain-source on-resistance:RDS(on) 3.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 7.5. Size:204K  inchange semiconductor
 irl3713s.pdf

IRL3713PBF IRL3713PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3713SFEATURESWith TO-263(D2PAK) packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency isolated DC-DC converters withsynchronous rectification for telecom and industrial use

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