All MOSFET. IRL1004LPBF Datasheet

 

IRL1004LPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRL1004LPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 1480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO262

 IRL1004LPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL1004LPBF Datasheet (PDF)

 ..1. Size:210K  international rectifier
 irl1004lpbf irl1004spbf.pdf

IRL1004LPBF IRL1004LPBF

PD - 95575IRL1004SPbFIRL1004LPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 40Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0065l Fully Avalanche RatedGl Lead-FreeID = 130ADescriptionSFifth Generation HEXFET power MOSFETs fromInternational Rectifier u

 6.1. Size:123K  international rectifier
 irl1004s irl1004l.pdf

IRL1004LPBF IRL1004LPBF

PD - 91644AIRL1004S IRL1004L Logic-Level Gate DriveHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance DVDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.0065G Fully Avalanche RatedDescriptionID = 130A SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processing

 7.1. Size:89K  international rectifier
 irl1004.pdf

IRL1004LPBF IRL1004LPBF

PD - 91702BIRL1004HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.0065 175C Operating TemperatureG Fast SwitchingID = 130A Fully Avalanche RatedSDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processing techniques

 7.2. Size:159K  international rectifier
 irl1004pbf.pdf

IRL1004LPBF IRL1004LPBF

PD - 95403IRL1004PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 40Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.0065l Fast Switching Gl Fully Avalanche RatedID = 130Al Lead-FreeSDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced

 7.3. Size:252K  inchange semiconductor
 irl1004s.pdf

IRL1004LPBF IRL1004LPBF

isc N-Channel MOSFET Transistor IRL1004SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 7.4. Size:245K  inchange semiconductor
 irl1004.pdf

IRL1004LPBF IRL1004LPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL1004IIRL1004FEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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