All MOSFET. IRHYB597034CM Datasheet

 

IRHYB597034CM Datasheet and Replacement


   Type Designator: IRHYB597034CM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 565 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.087 Ohm
   Package: TO257AA
 

 IRHYB597034CM substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRHYB597034CM Datasheet (PDF)

 ..1. Size:191K  international rectifier
 irhyb597034cm.pdf pdf_icon

IRHYB597034CM

PD-97000RADIATION HARDENED IRHYB597034CMPOWER MOSFET60V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA)TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHYB597034CM 100K Rads (Si) 0.087 -20A IRHYB593034CM 300K Rads (Si) 0.087 -20ALow-OhmicTO-257AA (Tab-less)International Rectifiers R5TM technology providesFeatures:high performance

 6.1. Size:181K  international rectifier
 irhyb597z30cm.pdf pdf_icon

IRHYB597034CM

PD - 95819RADIATION HARDENED IRHYB597Z30CMPOWER MOSFET30V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA)TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHYB597Z30CM 100K Rads (Si) 0.048 -20A* IRHYB593Z30CM 300K Rads (Si) 0.048 -20A*Low-OhmicTO-257AA TablessInternational Rectifiers R5TM technology providesFeatures:high performance

 9.1. Size:190K  international rectifier
 irhyb67230cm.pdf pdf_icon

IRHYB597034CM

PD-95818DRADIATION HARDENED IRHYB67230CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYB67230CM 100K Rads (Si) 0.13 16A IRHYB63230CM 300K Rads (Si) 0.13 16ALow-OhmicTO-257AA TablessInternational Rectifiers R6TM technology providessuperior power MOSFETs for space applications.These d

 9.2. Size:184K  international rectifier
 irhyb67130cm.pdf pdf_icon

IRHYB597034CM

PD-95841BRADIATION HARDENED IRHYB67130CMPOWER MOSFET 100V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYB67130CM 100K Rads (Si) 0.042 20A* IRHYB63130CM 300K Rads (Si) 0.042 20A*Low-OhmicTO-257AA TablessInternational Rectifiers R6TM technology providessuperior power MOSFETs for space applications.The

SHOW MORE

Datasheet: IRHY597130CM , IRHY597230CM , IRHY67434CM , IRHY67C30CM , IRHY7130CM , IRHY7230CM , IRHY9130CM , IRHY9230CM , IRF640N , IRHYB597Z30CM , IRHYB67130CM , IRHYB67134CM , IRHYB67230CM , IRHYK57133CMSE , IRHYS597034CM , IRHYS597Z30CM , IRHYS67130CM .

History: SFP740 | SSM9971GM | STB70N10F4 | STH270N8F7-6 | IRL3103PBF | STB28N60M2 | NDT3055

Keywords - IRHYB597034CM MOSFET datasheet

 IRHYB597034CM cross reference
 IRHYB597034CM equivalent finder
 IRHYB597034CM lookup
 IRHYB597034CM substitution
 IRHYB597034CM replacement

 

 
Back to Top

 


 
.