IRHYB597Z30CM Specs and Replacement

Type Designator: IRHYB597Z30CM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: TO257AA

IRHYB597Z30CM substitution

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IRHYB597Z30CM datasheet

 ..1. Size:181K  international rectifier
 irhyb597z30cm.pdf pdf_icon

IRHYB597Z30CM

PD - 95819 RADIATION HARDENED IRHYB597Z30CM POWER MOSFET 30V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHYB597Z30CM 100K Rads (Si) 0.048 -20A* IRHYB593Z30CM 300K Rads (Si) 0.048 -20A* Low-Ohmic TO-257AA Tabless International Rectifier s R5TM technology provides Features high performance ... See More ⇒

 6.1. Size:191K  international rectifier
 irhyb597034cm.pdf pdf_icon

IRHYB597Z30CM

PD-97000 RADIATION HARDENED IRHYB597034CM POWER MOSFET 60V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHYB597034CM 100K Rads (Si) 0.087 -20A IRHYB593034CM 300K Rads (Si) 0.087 -20A Low-Ohmic TO-257AA (Tab-less) International Rectifier s R5TM technology provides Features high performance ... See More ⇒

 9.1. Size:190K  international rectifier
 irhyb67230cm.pdf pdf_icon

IRHYB597Z30CM

PD-95818D RADIATION HARDENED IRHYB67230CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYB67230CM 100K Rads (Si) 0.13 16A IRHYB63230CM 300K Rads (Si) 0.13 16A Low-Ohmic TO-257AA Tabless International Rectifier s R6TM technology provides superior power MOSFETs for space applications. These d... See More ⇒

 9.2. Size:184K  international rectifier
 irhyb67130cm.pdf pdf_icon

IRHYB597Z30CM

PD-95841B RADIATION HARDENED IRHYB67130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYB67130CM 100K Rads (Si) 0.042 20A* IRHYB63130CM 300K Rads (Si) 0.042 20A* Low-Ohmic TO-257AA Tabless International Rectifier s R6TM technology provides superior power MOSFETs for space applications. The... See More ⇒

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Detailed specifications: IRHY597230CM, IRHY67434CM, IRHY67C30CM, IRHY7130CM, IRHY7230CM, IRHY9130CM, IRHY9230CM, IRHYB597034CM, IRF640N, IRHYB67130CM, IRHYB67134CM, IRHYB67230CM, IRHYK57133CMSE, IRHYS597034CM, IRHYS597Z30CM, IRHYS67130CM, IRHYS67134CM

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