All MOSFET. IRHYB597Z30CM Datasheet

 

IRHYB597Z30CM Datasheet and Replacement


   Type Designator: IRHYB597Z30CM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: TO257AA
 

 IRHYB597Z30CM substitution

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IRHYB597Z30CM Datasheet (PDF)

 ..1. Size:181K  international rectifier
 irhyb597z30cm.pdf pdf_icon

IRHYB597Z30CM

PD - 95819RADIATION HARDENED IRHYB597Z30CMPOWER MOSFET30V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA)TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHYB597Z30CM 100K Rads (Si) 0.048 -20A* IRHYB593Z30CM 300K Rads (Si) 0.048 -20A*Low-OhmicTO-257AA TablessInternational Rectifiers R5TM technology providesFeatures:high performance

 6.1. Size:191K  international rectifier
 irhyb597034cm.pdf pdf_icon

IRHYB597Z30CM

PD-97000RADIATION HARDENED IRHYB597034CMPOWER MOSFET60V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA)TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHYB597034CM 100K Rads (Si) 0.087 -20A IRHYB593034CM 300K Rads (Si) 0.087 -20ALow-OhmicTO-257AA (Tab-less)International Rectifiers R5TM technology providesFeatures:high performance

 9.1. Size:190K  international rectifier
 irhyb67230cm.pdf pdf_icon

IRHYB597Z30CM

PD-95818DRADIATION HARDENED IRHYB67230CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYB67230CM 100K Rads (Si) 0.13 16A IRHYB63230CM 300K Rads (Si) 0.13 16ALow-OhmicTO-257AA TablessInternational Rectifiers R6TM technology providessuperior power MOSFETs for space applications.These d

 9.2. Size:184K  international rectifier
 irhyb67130cm.pdf pdf_icon

IRHYB597Z30CM

PD-95841BRADIATION HARDENED IRHYB67130CMPOWER MOSFET 100V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYB67130CM 100K Rads (Si) 0.042 20A* IRHYB63130CM 300K Rads (Si) 0.042 20A*Low-OhmicTO-257AA TablessInternational Rectifiers R6TM technology providessuperior power MOSFETs for space applications.The

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Datasheet: IRHY597230CM , IRHY67434CM , IRHY67C30CM , IRHY7130CM , IRHY7230CM , IRHY9130CM , IRHY9230CM , IRHYB597034CM , IRF630 , IRHYB67130CM , IRHYB67134CM , IRHYB67230CM , IRHYK57133CMSE , IRHYS597034CM , IRHYS597Z30CM , IRHYS67130CM , IRHYS67134CM .

History: KIA75NF75 | STB21N90K5 | SIHD4N80E | SISA96DN | IPL60R160CFD7 | NTTFS5C471NL | SSP7460N

Keywords - IRHYB597Z30CM MOSFET datasheet

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