All MOSFET. IRHYS67130CM Datasheet

 

IRHYS67130CM Datasheet and Replacement


   Type Designator: IRHYS67130CM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 343 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO257AA
 

 IRHYS67130CM substitution

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IRHYS67130CM Datasheet (PDF)

 ..1. Size:194K  international rectifier
 irhys67130cm.pdf pdf_icon

IRHYS67130CM

PD-96986A2N7588T3RADIATION HARDENED IRHYS67130CMPOWER MOSFET 100V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYS67130CM 100K Rads (Si) 0.042 20A* IRHYS63130CM 300K Rads (Si) 0.042 20A*Low-OhmicInternational Rectifiers R6TM technology provides TO-257AAsuperior power MOSFETs for space applications.Fe

 5.1. Size:190K  international rectifier
 irhys67134cm.pdf pdf_icon

IRHYS67130CM

PD-96930C2N7590T3RADIATION HARDENED IRHYS67134CMPOWER MOSFET 150V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYS67134CM 100K Rads (Si) 0.090 19A IRHYS63134CM 300K Rads (Si) 0.090 19ALow-OhmicTO-257AAInternational Rectifiers R6TM technology providesFeatures:superior power MOSFETs for space applica

 7.1. Size:200K  international rectifier
 irhys67230cm.pdf pdf_icon

IRHYS67130CM

PD-96925C2N7592T3RADIATION HARDENED IRHYS67230CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYS67230CM 100K Rads (Si) 0.13 16A IRHYS63230CM 300K Rads (Si) 0.13 16ALow-OhmicInternational Rectifiers R6TM technology provides TO-257AAsuperior power MOSFETs for space applications.Featur

 7.2. Size:202K  international rectifier
 irhys67234cm.pdf pdf_icon

IRHYS67130CM

PD-97193A2N7594T3RADIATION HARDENED IRHYS67234CMPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHYS67234CM 100K Rads (Si) 0.22 12A IRHYS63234CM 300K Rads (Si) 0.22 12ALow-OhmicInternational Rectifiers R6TM technology provides TO-257AAsuperior power MOSFETs for space applications.Featur

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Datasheet: IRHYB597034CM , IRHYB597Z30CM , IRHYB67130CM , IRHYB67134CM , IRHYB67230CM , IRHYK57133CMSE , IRHYS597034CM , IRHYS597Z30CM , IRFP250N , IRHYS67134CM , IRHYS67230CM , IRHYS67234CM , IRHN57250SE , IRHN7054 , IRHN7130 , IRHN7150 , IRHN7230 .

History: SIZ704DT | NCEP072N10A

Keywords - IRHYS67130CM MOSFET datasheet

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