IRHYS67230CM Specs and Replacement

Type Designator: IRHYS67230CM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 206 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO257AA

IRHYS67230CM substitution

- MOSFET ⓘ Cross-Reference Search

 

IRHYS67230CM datasheet

 ..1. Size:200K  international rectifier
 irhys67230cm.pdf pdf_icon

IRHYS67230CM

PD-96925C 2N7592T3 RADIATION HARDENED IRHYS67230CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67230CM 100K Rads (Si) 0.13 16A IRHYS63230CM 300K Rads (Si) 0.13 16A Low-Ohmic International Rectifier s R6TM technology provides TO-257AA superior power MOSFETs for space applications. Featur... See More ⇒

 5.1. Size:202K  international rectifier
 irhys67234cm.pdf pdf_icon

IRHYS67230CM

PD-97193A 2N7594T3 RADIATION HARDENED IRHYS67234CM POWER MOSFET 250V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67234CM 100K Rads (Si) 0.22 12A IRHYS63234CM 300K Rads (Si) 0.22 12A Low-Ohmic International Rectifier s R6TM technology provides TO-257AA superior power MOSFETs for space applications. Featur... See More ⇒

 7.1. Size:190K  international rectifier
 irhys67134cm.pdf pdf_icon

IRHYS67230CM

PD-96930C 2N7590T3 RADIATION HARDENED IRHYS67134CM POWER MOSFET 150V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67134CM 100K Rads (Si) 0.090 19A IRHYS63134CM 300K Rads (Si) 0.090 19A Low-Ohmic TO-257AA International Rectifier s R6TM technology provides Features superior power MOSFETs for space applica... See More ⇒

 7.2. Size:194K  international rectifier
 irhys67130cm.pdf pdf_icon

IRHYS67230CM

PD-96986A 2N7588T3 RADIATION HARDENED IRHYS67130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYS67130CM 100K Rads (Si) 0.042 20A* IRHYS63130CM 300K Rads (Si) 0.042 20A* Low-Ohmic International Rectifier s R6TM technology provides TO-257AA superior power MOSFETs for space applications. Fe... See More ⇒

SHOW MORE

Detailed specifications: IRHYB67130CM, IRHYB67134CM, IRHYB67230CM, IRHYK57133CMSE, IRHYS597034CM, IRHYS597Z30CM, IRHYS67130CM, IRHYS67134CM, P55NF06, IRHYS67234CM, IRHN57250SE, IRHN7054, IRHN7130, IRHN7150, IRHN7230, IRHN7250, IRHN7250SE

Keywords - IRHYS67230CM MOSFET specs

 IRHYS67230CM cross reference

 IRHYS67230CM equivalent finder

 IRHYS67230CM pdf lookup

 IRHYS67230CM substitution

 IRHYS67230CM replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.