IRHN7230 Specs and Replacement

Type Designator: IRHN7230

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO276AB

IRHN7230 substitution

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IRHN7230 datasheet

 ..1. Size:440K  international rectifier
 irhn7230.pdf pdf_icon

IRHN7230

PD - 90822C IRHN7230 IRHN7230 IRHN7230 RADIATION HARDENED IRHN7230 RADIATION HARDENED IRHN7230 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL 200V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TE... See More ⇒

 8.1. Size:277K  international rectifier
 irhn7250.pdf pdf_icon

IRHN7230

PD - 90679F IRHN7250 JANSR2N7269U RADIATION HARDENED 200V, N-CHANNEL POWER MOSFET REF MIL-PRF-19500/603 SURFACE MOUNT(SMD-1) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN7250 100K Rads (Si) 0.1 26A JANSR2N7269U IRHN3250 300K Rads (Si) 0.1 26A JANSF2N7269U IRHN4250 600K Rads (Si) 0.1 26A JANSG2N7269U IRHN8250 ... See More ⇒

 8.2. Size:1035K  international rectifier
 irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf pdf_icon

IRHN7230

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, ... See More ⇒

 8.3. Size:124K  international rectifier
 irhn7250se.pdf pdf_icon

IRHN7230

PD - 91780B RADIATION HARDENED IRHN7250SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-1) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHN7250SE 100K Rads (Si) 0.10 26A SMD-1 International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs Features for space applications. This technology ha... See More ⇒

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Detailed specifications: IRHYS67130CM, IRHYS67134CM, IRHYS67230CM, IRHYS67234CM, IRHN57250SE, IRHN7054, IRHN7130, IRHN7150, AON7408, IRHN7250, IRHN7250SE, IRHN7450, IRHN7450SE, IRHN7C50SE, IRHN9130, IRHN9150, IRHN9230

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