All MOSFET. IRHN7230 Datasheet

 

IRHN7230 Datasheet and Replacement


   Type Designator: IRHN7230
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO276AB
      - MOSFET Cross-Reference Search

 

IRHN7230 Datasheet (PDF)

 ..1. Size:440K  international rectifier
irhn7230.pdf pdf_icon

IRHN7230

PD - 90822CIRHN7230IRHN7230IRHN7230RADIATION HARDENED IRHN7230RADIATION HARDENED IRHN7230RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE

 8.1. Size:277K  international rectifier
irhn7250.pdf pdf_icon

IRHN7230

PD - 90679FIRHN7250JANSR2N7269URADIATION HARDENED200V, N-CHANNELPOWER MOSFET REF:MIL-PRF-19500/603SURFACE MOUNT(SMD-1) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part NumberIRHN7250 100K Rads (Si) 0.1 26A JANSR2N7269UIRHN3250 300K Rads (Si) 0.1 26A JANSF2N7269UIRHN4250 600K Rads (Si) 0.1 26A JANSG2N7269UIRHN8250

 8.2. Size:1035K  international rectifier
irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf pdf_icon

IRHN7230

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

 8.3. Size:124K  international rectifier
irhn7250se.pdf pdf_icon

IRHN7230

PD - 91780BRADIATION HARDENED IRHN7250SEPOWER MOSFET 200V, N-CHANNELSURFACE MOUNT (SMD-1) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHN7250SE 100K Rads (Si) 0.10 26ASMD-1International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology ha

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK3192 | FQD4N25TM

Keywords - IRHN7230 MOSFET datasheet

 IRHN7230 cross reference
 IRHN7230 equivalent finder
 IRHN7230 lookup
 IRHN7230 substitution
 IRHN7230 replacement

 

 
Back to Top

 


 
.