IRHM9160 Specs and Replacement

Type Designator: IRHM9160

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.073 Ohm

Package: TO254AA

IRHM9160 substitution

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IRHM9160 datasheet

 ..1. Size:237K  international rectifier
 irhm9064 irhm9160 irhm9260.pdf pdf_icon

IRHM9160

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426... See More ⇒

 ..2. Size:122K  international rectifier
 irhm9160.pdf pdf_icon

IRHM9160

PD - 91415E IRHM9160 JANSR2N7425 RADIATION HARDENED 100V, P-CHANNEL POWER MOSFET REF MIL-PRF-19500/660 THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9160 100K Rads (Si) 0.073 -35A* JANSR2N7425 IRHM93160 300K Rads (Si) 0.073 -35A* JANSF2N7425 International Rectifier s RAD-Hard HEXFETTM techn... See More ⇒

 8.1. Size:128K  international rectifier
 irhm9130.pdf pdf_icon

IRHM9160

PD - 90888C RADIATION HARDENED IRHM9130 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHM9130 100K Rads (Si) 0.3 -11A IRHM93130 300K Rads (Si) 0.3 -11A International Rectifier s RAD-Hard HEXFETTM technol- TO-254AA ogy provides high performance power MOSFETs for space applications.... See More ⇒

 8.2. Size:272K  international rectifier
 irhm9150 irhm9250 irhn9150 irhn9250.pdf pdf_icon

IRHM9160

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U... See More ⇒

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Detailed specifications: IRHM7360SE, IRHM7450, IRHM7450SE, IRHM7460SE, IRHM7Z60, IRHM9064, IRHM9130, IRHM9150, 10N65, IRHM9230, IRHM9250, IRHM9260, IRHMB57064, IRHMB57260SE, IRHMB57Z60, IRHMJ57160, IRHMJ57260SE

Keywords - IRHM9160 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.