The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426

PD - 91415EIRHM9160JANSR2N7425RADIATION HARDENED 100V, P-CHANNELPOWER MOSFET REF: MIL-PRF-19500/660THRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9160 100K Rads (Si) 0.073 -35A* JANSR2N7425 IRHM93160 300K Rads (Si) 0.073 -35A* JANSF2N7425International Rectifiers RAD-Hard HEXFETTM techn

PD - 90888CRADIATION HARDENED IRHM9130POWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHM9130 100K Rads (Si) 0.3 -11A IRHM93130 300K Rads (Si) 0.3 -11AInternational Rectifiers RAD-Hard HEXFETTM technol-TO-254AAogy provides high performance power MOSFETs forspace applications.

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

PD - 90889CIRHM9150JANSR2N7422RADIATION HARDENED 100V, P-CHANNELPOWER MOSFET REF: MIL-PRF-19500/662THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9150 100K Rads (Si) 0.080 -22A JANSR2N7422 IRHM93150 300K Rads (Si) 0.080 -22A JANSF2N7422TO-254AAInternational Rectifiers RADHard HEXFETT